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Lam Research Flow Controller 810-107813-107, 810-064624-521
Lam Research 810-107813-107, 810-064624-521
Product Overview
The Lam Research 810-107813-107 is an ultra-high-purity digital Mass Flow Controller (MFC) integrated module specially designed for the front-end process gas delivery system of semiconductor plasma etching and deposition equipment. As a core metering and execution component in Lam Research Gas Panels, this module is responsible for delivering trace amounts of special process gases (typically measured in Standard Cubic Centimeters per Minute, SCCM) to the reaction chamber with ultra-high precision and fast response speed.
Different from standard industrial-grade MFCs, the 810-107813-107 features an ultra-clean electrolytically polished internal flow channel. Its sensing element adopts a frictionless suspension design (thermal or pressure-based), integrated with precision laminar flow elements and adiabatic coils. This structure enables accurate gas mass flow measurement that is immune to inlet temperature and pressure fluctuations. In high-aspect-ratio etching for 3D NAND and atomic-level etching for advanced logic chips, the flow control stability of this module directly determines the chemical reaction rate, etching selectivity, and critical dimension (CD) uniformity on wafer surfaces.
As part of Lam Research’s highly customized spare part system, this model is designed in strict compliance with SEMI standards, fully meeting the semiconductor industry’s extreme requirements for ultra-high cleanliness, superior corrosion resistance, and high pressure resistance. It adopts a special alloy valve body resistant to halogen gas corrosion and an all-metal sealing structure. Equipped with a high-speed Digital Signal Processor (DSP), it responds to process recipe flow changes within milliseconds and quickly eliminates flow disturbances caused by upstream pressure fluctuations or downstream gas load variations.
The Lam Research 810-107813-107 is an ultra-high-purity digital Mass Flow Controller (MFC) integrated module specially designed for the front-end process gas delivery system of semiconductor plasma etching and deposition equipment. As a core metering and execution component in Lam Research Gas Panels, this module is responsible for delivering trace amounts of special process gases (typically measured in Standard Cubic Centimeters per Minute, SCCM) to the reaction chamber with ultra-high precision and fast response speed.
Different from standard industrial-grade MFCs, the 810-107813-107 features an ultra-clean electrolytically polished internal flow channel. Its sensing element adopts a frictionless suspension design (thermal or pressure-based), integrated with precision laminar flow elements and adiabatic coils. This structure enables accurate gas mass flow measurement that is immune to inlet temperature and pressure fluctuations. In high-aspect-ratio etching for 3D NAND and atomic-level etching for advanced logic chips, the flow control stability of this module directly determines the chemical reaction rate, etching selectivity, and critical dimension (CD) uniformity on wafer surfaces.
As part of Lam Research’s highly customized spare part system, this model is designed in strict compliance with SEMI standards, fully meeting the semiconductor industry’s extreme requirements for ultra-high cleanliness, superior corrosion resistance, and high pressure resistance. It adopts a special alloy valve body resistant to halogen gas corrosion and an all-metal sealing structure. Equipped with a high-speed Digital Signal Processor (DSP), it responds to process recipe flow changes within milliseconds and quickly eliminates flow disturbances caused by upstream pressure fluctuations or downstream gas load variations.
Product Specifications
Parameter Name
Parameter Value
Product Model
Lam Research 810-107813-107
Manufacturer
Lam Research
Product Type
Ultra-high-purity Digital Mass Flow Controller (MFC) Module
Applicable Flow Range
Typical 10 SCCM ~ 50 SLM (subject to specific spool configuration)
Control Accuracy
± 0.5% of setpoint (10% ~ 100% of full scale)
Repeatability
± 0.2% of full scale
Response Time (Setpoint)
< 800 ms (within ±2% of final value)
Applicable Gas Types
Corrosive gases (Cl₂, BCl₃, HBr, CF₄, NF₃, etc.) and inert gases
Valve Body Material
Corrosion-resistant stainless steel (316L VAR or Hastelloy C-22)
Sealing Material
All-metal (metal gasket) or high-durability FFKM (Perfluoroelastomer)
Maximum Inlet Pressure
150 psig (approx. 10.3 bar)
Pressure Drop Range
10 ~ 60 psid (subject to specific setpoint)
Internal Leak Rate
< 1.0 × 10⁻⁹ atm·cc/sec (He)
External Leak Rate
< 1.0 × 10⁻¹⁰ atm·cc/sec (He)
Operating Temperature Range
15°C to 50°C (valve body can be heated to 120°C to prevent condensation)
Communication Protocol
DeviceNet™ or RS-485 (digital communication, supporting remote setting and diagnosis)
Cleanliness Level
Class 1 assembly environment, double-layer vacuum sealed packaging
Power Supply Voltage
24 VDC ± 10%
| Parameter Name | Parameter Value |
|---|---|
| Product Model | Lam Research 810-107813-107 |
| Manufacturer | Lam Research |
| Product Type | Ultra-high-purity Digital Mass Flow Controller (MFC) Module |
| Applicable Flow Range | Typical 10 SCCM ~ 50 SLM (subject to specific spool configuration) |
| Control Accuracy | ± 0.5% of setpoint (10% ~ 100% of full scale) |
| Repeatability | ± 0.2% of full scale |
| Response Time (Setpoint) | < 800 ms (within ±2% of final value) |
| Applicable Gas Types | Corrosive gases (Cl₂, BCl₃, HBr, CF₄, NF₃, etc.) and inert gases |
| Valve Body Material | Corrosion-resistant stainless steel (316L VAR or Hastelloy C-22) |
| Sealing Material | All-metal (metal gasket) or high-durability FFKM (Perfluoroelastomer) |
| Maximum Inlet Pressure | 150 psig (approx. 10.3 bar) |
| Pressure Drop Range | 10 ~ 60 psid (subject to specific setpoint) |
| Internal Leak Rate | < 1.0 × 10⁻⁹ atm·cc/sec (He) |
| External Leak Rate | < 1.0 × 10⁻¹⁰ atm·cc/sec (He) |
| Operating Temperature Range | 15°C to 50°C (valve body can be heated to 120°C to prevent condensation) |
| Communication Protocol | DeviceNet™ or RS-485 (digital communication, supporting remote setting and diagnosis) |
| Cleanliness Level | Class 1 assembly environment, double-layer vacuum sealed packaging |
| Power Supply Voltage | 24 VDC ± 10% |
Structure and Composition
The Lam Research 810-107813-107 integrates high-precision microfluidic manufacturing technology and high-reliability intelligent control technology. Physically, the module consists of three core functional areas: flow and sensing area, control valve actuation area, and signal processing and communication area.
The flow and sensing area serves as the core gas circuit of the module. It is mainly composed of an ultra-precision machined special alloy metal block, equipped with a bypass capillary for mainstream gas shunting and a spiral or straight sensing tube. Heating coils and temperature-sensing elements are wrapped around the sensing tube, forming a high-performance thermal mass flow sensing core. When gas flows through the tube, it generates a temperature difference between the upstream and downstream sections. The Wheatstone bridge circuit amplifies the temperature difference signal to accurately calculate the instantaneous gas mass flow rate.
The control valve actuation area is the physical execution mechanism, located at the downstream outlet of the gas flow channel. It integrates a high-dynamic-response electromagnetic proportional regulating valve with a specially designed spool. This design resists chemical wear in corrosive gas environments and maintains an extremely low deadband.
The signal processing and communication area acts as the intelligent core of the 810-107813-107 module. It adopts a multi-layer high-density Printed Circuit Board (PCB) equipped with a high-speed Microcontroller Unit (MCU), high-precision ADC/DAC, and isolated communication interface chips. The MCU collects real-time flow sensing signals and calculates output values via built-in PID (Proportional-Integral-Derivative) control algorithms, driving the proportional solenoid valve precisely to stabilize the target flow. The entire PCB assembly is enclosed in a shield cover on the module upper cover, effectively resisting strong Radio Frequency (RF) electromagnetic field interference near the reaction chamber.
The Lam Research 810-107813-107 integrates high-precision microfluidic manufacturing technology and high-reliability intelligent control technology. Physically, the module consists of three core functional areas: flow and sensing area, control valve actuation area, and signal processing and communication area.
The flow and sensing area serves as the core gas circuit of the module. It is mainly composed of an ultra-precision machined special alloy metal block, equipped with a bypass capillary for mainstream gas shunting and a spiral or straight sensing tube. Heating coils and temperature-sensing elements are wrapped around the sensing tube, forming a high-performance thermal mass flow sensing core. When gas flows through the tube, it generates a temperature difference between the upstream and downstream sections. The Wheatstone bridge circuit amplifies the temperature difference signal to accurately calculate the instantaneous gas mass flow rate.
The control valve actuation area is the physical execution mechanism, located at the downstream outlet of the gas flow channel. It integrates a high-dynamic-response electromagnetic proportional regulating valve with a specially designed spool. This design resists chemical wear in corrosive gas environments and maintains an extremely low deadband.
The signal processing and communication area acts as the intelligent core of the 810-107813-107 module. It adopts a multi-layer high-density Printed Circuit Board (PCB) equipped with a high-speed Microcontroller Unit (MCU), high-precision ADC/DAC, and isolated communication interface chips. The MCU collects real-time flow sensing signals and calculates output values via built-in PID (Proportional-Integral-Derivative) control algorithms, driving the proportional solenoid valve precisely to stabilize the target flow. The entire PCB assembly is enclosed in a shield cover on the module upper cover, effectively resisting strong Radio Frequency (RF) electromagnetic field interference near the reaction chamber.
Key Features and Advantages
Ultra-high Precision and Excellent Long-term Stability
Equipped with advanced thermal sensing technology and a full-digital closed-loop control algorithm, the Lam Research 810-107813-107 delivers industry-leading setpoint control accuracy across the full flow range. Its built-in zero-drift compensation technology effectively suppresses flow deviations caused by ambient temperature changes and gas composition differences. It maintains negligible flow output drift during continuous operation for weeks or months, ensuring high repeatability of wafer process results.
Ultra-fast Response and Active Flow Compensation
Advanced pulsed plasma processes require synchronous flow pulsation with RF power switching. Featuring a step response time of less than 800 ms, the module tracks recipe flow changes in real time. More importantly, the integrated DSP monitors inlet pressure fluctuations dynamically and initiates active valve pre-compensation. This completely eliminates downstream flow disturbances caused by upstream gas pressure variations and significantly improves transient process stability.
Corrosion Resistance and Ultimate Cleanliness Assurance
Optimized for strongly corrosive and toxic gases used in semiconductor processes, the module adopts a high-nickel alloy valve body and all-metal/FFKM special sealing solutions. Its internal flow channel undergoes Electrolytic Polishing (EP) treatment with an ultra-low surface roughness. This prevents gas molecule adsorption and particle retention on the channel inner wall, enabling rapid gas switching replacement and ultra-low cross-contamination risk, fully meeting the ultra-high cleanliness standards for semiconductor core gas components.
Application Fields
The Lam Research 810-107813-107 is mainly integrated into advanced 200mm and 300mm wafer manufacturing equipment, serving as a core flow control component in the Gas Box systems of Lam Research 2300 series (Kiyo series dielectric etchers, Flex series conductor etchers) and Versys series metal etchers.
It is widely used in critical etching steps for logic chip manufacturing, including CF₄/CHF₃ mixed gas control for Shallow Trench Isolation (STI) etching, precise Cl₂/HBr ratio control for polysilicon gate etching, and complex gas switching for low-k dielectric etching in Back-End-of-Line (BEOL) Damascus processes. For memory chips, it supports stepped flow control of precursor gases in ultra-high-aspect-ratio channel hole etching for 3D NAND flash memory.
In broader semi-conductor and emerging technology fields, the module is applicable to deep silicon etching (Bosch process with alternating C₄F₈ and SF₆ control) for MEMS devices and high-temperature etching processes for power devices (IGBT, SiC, etc.). It effectively solves core process challenges in wafer fabrication, such as etch rate drift, aggravated micro-loading effect, and particle contamination caused by flow overshoot. As a key component for process tuning and low-yield troubleshooting in fabs, it is indispensable in etching and deposition process modules of global wafer foundries.
The Lam Research 810-107813-107 is mainly integrated into advanced 200mm and 300mm wafer manufacturing equipment, serving as a core flow control component in the Gas Box systems of Lam Research 2300 series (Kiyo series dielectric etchers, Flex series conductor etchers) and Versys series metal etchers.
It is widely used in critical etching steps for logic chip manufacturing, including CF₄/CHF₃ mixed gas control for Shallow Trench Isolation (STI) etching, precise Cl₂/HBr ratio control for polysilicon gate etching, and complex gas switching for low-k dielectric etching in Back-End-of-Line (BEOL) Damascus processes. For memory chips, it supports stepped flow control of precursor gases in ultra-high-aspect-ratio channel hole etching for 3D NAND flash memory.
In broader semi-conductor and emerging technology fields, the module is applicable to deep silicon etching (Bosch process with alternating C₄F₈ and SF₆ control) for MEMS devices and high-temperature etching processes for power devices (IGBT, SiC, etc.). It effectively solves core process challenges in wafer fabrication, such as etch rate drift, aggravated micro-loading effect, and particle contamination caused by flow overshoot. As a key component for process tuning and low-yield troubleshooting in fabs, it is indispensable in etching and deposition process modules of global wafer foundries.
Related Products
Lam Research 810-107813-105: A low-flow variant of the same series (10 SCCM level), suitable for Atomic Layer Deposition (ALD) processes and low-rate etching steps requiring trace gas injection.
Lam Research 810-107813-109: A high-flow variant of the same series (100 SLM level), commonly used for chamber cleaning and high-flow main etching steps, achieving full flow range complementation with the 810-107813-107 model.
Lam Research 810-107813-207: A communication protocol variant (supporting EtherCAT or Profibus instead of DeviceNet) to adapt to Lam equipment with different generations and communication architectures.
Lam Research 830-101012-001: A dedicated high-purity gas filter matched with the MFC. Installed in series at the upstream inlet, it intercepts submicron particles in the gas source and protects the internal spool of the 810-107813-107 from contamination.
Lam Research 830-101520-002: A special metal sealing gasket (C-Seal/Helicoflex) for the model. It must be replaced during MFC maintenance to ensure ultra-high vacuum tightness of gas circuit connections.
Lam Research 810-002895-102: A downstream precision pressure/flow regulating valve assembly matched with the MFC. The two components form a complete closed-loop control system for the reaction chamber gas environment.
Lam Research 810-107813-001: A dedicated terminal matching resistor and communication plug for the model. It eliminates signal reflection in DeviceNet network topology and ensures stable communication performance.
Lam Research 810-107813-105: A low-flow variant of the same series (10 SCCM level), suitable for Atomic Layer Deposition (ALD) processes and low-rate etching steps requiring trace gas injection.
Lam Research 810-107813-109: A high-flow variant of the same series (100 SLM level), commonly used for chamber cleaning and high-flow main etching steps, achieving full flow range complementation with the 810-107813-107 model.
Lam Research 810-107813-207: A communication protocol variant (supporting EtherCAT or Profibus instead of DeviceNet) to adapt to Lam equipment with different generations and communication architectures.
Lam Research 830-101012-001: A dedicated high-purity gas filter matched with the MFC. Installed in series at the upstream inlet, it intercepts submicron particles in the gas source and protects the internal spool of the 810-107813-107 from contamination.
Lam Research 830-101520-002: A special metal sealing gasket (C-Seal/Helicoflex) for the model. It must be replaced during MFC maintenance to ensure ultra-high vacuum tightness of gas circuit connections.
Lam Research 810-002895-102: A downstream precision pressure/flow regulating valve assembly matched with the MFC. The two components form a complete closed-loop control system for the reaction chamber gas environment.
Lam Research 810-107813-001: A dedicated terminal matching resistor and communication plug for the model. It eliminates signal reflection in DeviceNet network topology and ensures stable communication performance.
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